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IPB038N12N3GATMA1

IPB038N12N3GATMA1 Infineon Technologies

IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+3.51 EUR
2000+3.3 EUR
3000+3.2 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB038N12N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 120V 120A D2PAK, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V.

Weitere Produktangebote IPB038N12N3GATMA1 nach Preis ab 2.97 EUR bis 9.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies Infineon_IPP_I_B041N12N3_DS_v02_03_en.pdf MOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.79 EUR
10+3.63 EUR
100+3.56 EUR
500+3.52 EUR
1000+2.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 9719 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.57 EUR
10+6.36 EUR
100+4.54 EUR
500+3.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 Infineon_IPP_I_B041N12N3_DS_v02_03_en.pdf
IPB038N12N3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+5.79 EUR
10+3.63 EUR
100+3.56 EUR
500+3.52 EUR
1000+2.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 9719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.57 EUR
10+6.36 EUR
100+4.54 EUR
500+3.76 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH