IPB048N15N5ATMA1 Infineon Technologies
auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 12.05 EUR |
| 16+ | 9.9 EUR |
| 25+ | 9.09 EUR |
| 100+ | 7.52 EUR |
| 250+ | 7.04 EUR |
| 500+ | 5.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB048N15N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 264µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V.
Weitere Produktangebote IPB048N15N5ATMA1 nach Preis ab 6 EUR bis 12.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPB048N15N5ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IPB048N15N5ATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 1601 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPB048N15N5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPB048N15N5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 953 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| IPB048N15N5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
IPB048N15N5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IPB048N15N5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO 263-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |