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IPB048N15N5LF

IPB048N15N5LF INFINEON TECHNOLOGIES

IPB048N15N5LF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 313W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 115A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO263-3
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Technische Details IPB048N15N5LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3, Type of transistor: N-MOSFET, On-state resistance: 4.8mΩ, Mounting: SMD, Power dissipation: 313W, Polarisation: unipolar, Technology: OptiMOS™ 5, Drain current: 115A, Kind of channel: enhancement, Drain-source voltage: 150V, Gate-source voltage: ±20V, Case: PG-TO263-3.