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IPB049NE7N3GATMA1

IPB049NE7N3GATMA1 Infineon Technologies

IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.91 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB049NE7N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 75V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 91µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V.

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IPB049NE7N3GATMA1 IPB049NE7N3GATMA1 Hersteller : Infineon Technologies IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.33 EUR
100+2.41 EUR
500+2.01 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB049NE7N3GATMA1 IPB049NE7N3GATMA1 Hersteller : Infineon Technologies Infineon-IPB049NE7N3-DS-v02_02-en-1226914.pdf MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.9 EUR
10+5.32 EUR
100+4.28 EUR
500+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB049NE7N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 IPB049NE7N3GATMA1 SMD N channel transistors
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