IPB054N06N3 G Infineon Technologies
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.97 EUR |
| 250+ | 1.80 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.41 EUR |
| 2000+ | 1.34 EUR |
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Technische Details IPB054N06N3 G Infineon Technologies
Description: IPB054N06 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 58µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPB054N06N3G | Hersteller : Infineon technologies |
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auf Bestellung 161 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPB054N06N3G | Hersteller : Infineon Technologies |
Description: IPB054N06 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V |
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