IPB054N06N3 G

IPB054N06N3 G Infineon Technologies


Infineon_B057N06N3_DS_v02_02_en-1730902.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 80A D2PAK-2 OptiMOS 3
auf Bestellung 153 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.96 EUR
10+2.46 EUR
100+1.97 EUR
250+1.80 EUR
500+1.64 EUR
1000+1.41 EUR
2000+1.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPB054N06N3 G Infineon Technologies

Description: IPB054N06 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 58µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V.

Weitere Produktangebote IPB054N06N3 G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPB054N06N3G Hersteller : Infineon technologies INFNS16475-1.pdf?t.download=true&u=5oefqw
auf Bestellung 161 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB054N06N3G Hersteller : Infineon Technologies INFNS16475-1.pdf?t.download=true&u=5oefqw Description: IPB054N06 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH