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IPB054N08N3GATMA1

IPB054N08N3GATMA1 Infineon Technologies

Infineon_IPP057N08N3_DS_v01_02_en-1227177.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3
auf Bestellung 3102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.75 EUR
10+2.02 EUR
100+1.52 EUR
250+1.51 EUR
500+1.36 EUR
Mindestbestellmenge: 2
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Technische Details IPB054N08N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V.

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IPB054N08N3GATMA1 IPB054N08N3GATMA1 Hersteller : Infineon Technologies IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
10+2.59 EUR
100+1.78 EUR
500+1.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB054N08N3GATMA1 IPB054N08N3GATMA1 Hersteller : Infineon Technologies ipb054n08n3g.pdf Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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IPB054N08N3GATMA1 IPB054N08N3GATMA1 Hersteller : Infineon Technologies IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
Produkt ist nicht verfügbar
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IPB054N08N3GATMA1 IPB054N08N3GATMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAD8376444C11C&compId=IPB054N08N3G-DTE.pdf?ci_sign=a97463763342bf8843fb520d4a928c6f3f3b933a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 150W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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