IPB055N08NF2SATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.01 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.76 EUR |
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Technische Details IPB055N08NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 94A, Power dissipation: 107W, Case: D2PAK-3, On-state resistance: 5.5mΩ, Mounting: SMD, Gate charge: 36nC, Kind of channel: enhancement.
Weitere Produktangebote IPB055N08NF2SATMA1
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IPB055N08NF2SATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
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IPB055N08NF2SATMA1 | Hersteller : Infineon Technologies |
MOSFETs IFX FET > 60-80V |
Produkt ist nicht verfügbar |
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| IPB055N08NF2SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 94A Power dissipation: 107W Case: D2PAK-3 On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 36nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |