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IPB065N15N3GATMA1

IPB065N15N3GATMA1 Infineon Technologies

IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+6.83 EUR
Mindestbestellmenge: 1000
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Technische Details IPB065N15N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 130A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V.

Weitere Produktangebote IPB065N15N3GATMA1 nach Preis ab 7.59 EUR bis 16.85 EUR

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IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : Infineon Technologies IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.04 EUR
10+ 10.33 EUR
100+ 8.61 EUR
500+ 7.59 EUR
Mindestbestellmenge: 2
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : Infineon Technologies Infineon_IPB065N15N3G_DS_v02_01_en-1731683.pdf MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
auf Bestellung 187 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.85 EUR
10+ 14.56 EUR
25+ 14.33 EUR
100+ 12.25 EUR
250+ 12.19 EUR
500+ 10.95 EUR
1000+ 9.96 EUR
Mindestbestellmenge: 4
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : Infineon Technologies ipb065n15n3g_rev2.1.pdffolderiddb3a304326623792012669f6bee2224bfileiddb3a30432662379201266a037.pdf Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : Infineon Technologies ipb065n15n3g_rev2.1.pdffolderiddb3a304326623792012669f6bee2224bfileiddb3a30432662379201266a037.pdf Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
Produkt ist nicht verfügbar