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IPB065N15N3GATMA1 Infineon Technologies


IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+4.01 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB065N15N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 130A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V.

Weitere Produktangebote IPB065N15N3GATMA1 nach Preis ab 4.59 EUR bis 10.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Infineon Technologies Infineon-IPB065N15N3G-DS-v02_01-en.pdf MOSFETs N-Ch 150V 130A D2PAK-6 OptiMOS 3
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.26 EUR
10+7.02 EUR
100+5.12 EUR
500+4.93 EUR
1000+4.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Infineon Technologies IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 3501 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
10+7.39 EUR
100+5.35 EUR
500+4.91 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N15N3GATMA1 Infineon-IPB065N15N3G-DS-v02_01-en.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 150V 130A D2PAK-6 OptiMOS 3
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+10.26 EUR
10+7.02 EUR
100+5.12 EUR
500+4.93 EUR
1000+4.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N15N3GATMA1 IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
auf Bestellung 3501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.98 EUR
10+7.39 EUR
100+5.35 EUR
500+4.91 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH