Technische Details IPB070N06NG infineon
Description: MOSFET N-CHAN D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V, Vgs(th) (Max) @ Id: 4V @ 180µA, Supplier Device Package: PG-TO263-3, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V.
Weitere Produktangebote IPB070N06NG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPB070N06NG | Hersteller : infineon | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB070N06N G | Hersteller : Infineon Technologies |
 Description: MOSFET N-CHAN D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPB070N06NG | Hersteller : Infineon Technologies | MOSFET N-Channel MOSFET 20-200V |
Produkt ist nicht verfügbar |