IPB083N15N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Power dissipation: 179W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 66A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details IPB083N15N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3, Case: PG-TO263-3, Mounting: SMD, Power dissipation: 179W, Polarisation: unipolar, Technology: OptiMOS™ 5, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 150V, Drain current: 66A, On-state resistance: 8.3mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
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IPB083N15N5LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Power dissipation: 179W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 66A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |