IPB083N15N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 66A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPB083N15N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 66A, Power dissipation: 179W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 8.3mΩ, Mounting: SMD, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
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IPB083N15N5LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 66A Power dissipation: 179W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |