Technische Details IPB085N06LG infineon
Description: MOSFET N-CH 60V 80A TO-263, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V, Vgs(th) (Max) @ Id: 2V @ 125µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V.
Weitere Produktangebote IPB085N06LG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IPB085N06LG | Hersteller : infineon | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB085N06L G | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 80A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
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