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IPB085N15NM6ATMA1

IPB085N15NM6ATMA1 Infineon Technologies

DS_IPB085N15NM6_en.pdf Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+2.97 EUR
100+2.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB085N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V, Power Dissipation (Max): 3.8W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 73µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V.

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IPB085N15NM6ATMA1 IPB085N15NM6ATMA1 Hersteller : Infineon Technologies Infineon_IPB085N15NM6_DataSheet_v01_00_EN.pdf MOSFETs OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.73 EUR
10+3.08 EUR
100+2.25 EUR
500+1.9 EUR
1000+1.61 EUR
2000+1.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB085N15NM6ATMA1 IPB085N15NM6ATMA1 Hersteller : Infineon Technologies DS_IPB085N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH