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IPB100N04S204ATMA4

IPB100N04S204ATMA4 Infineon Technologies

ipp_b100n04s2-04_green.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 17000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+3.83 EUR
Mindestbestellmenge: 1000
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Technische Details IPB100N04S204ATMA4 Infineon Technologies

Description: MOSFET N-CH 40V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V.

Weitere Produktangebote IPB100N04S204ATMA4 nach Preis ab 3.99 EUR bis 9.85 EUR

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IPB100N04S204ATMA4 IPB100N04S204ATMA4 Hersteller : Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.62 EUR
10+ 5.55 EUR
100+ 4.49 EUR
500+ 3.99 EUR
Mindestbestellmenge: 3
IPB100N04S204ATMA4 IPB100N04S204ATMA4 Hersteller : Infineon Technologies Infineon_IPB100N04S2_04_DataSheet_v01_00_EN-2320670.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 1000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.85 EUR
10+ 8.27 EUR
25+ 8.19 EUR
100+ 6.68 EUR
250+ 6.66 EUR
500+ 5.95 EUR
1000+ 5.07 EUR
Mindestbestellmenge: 6
IPB100N04S204ATMA4 IPB100N04S204ATMA4 Hersteller : Infineon Technologies ipp_b100n04s2-04_green.pdf Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB100N04S204ATMA4 IPB100N04S204ATMA4 Hersteller : Infineon Technologies ipp_b100n04s2-04_green.pdf Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB100N04S204ATMA4 IPB100N04S204ATMA4 Hersteller : Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar