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IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1 Infineon Technologies

Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.11 EUR
2000+ 2 EUR
Mindestbestellmenge: 1000
Produktrezensionen
Produktbewertung abgeben

Technische Details IPB100N04S4H2ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V.

Weitere Produktangebote IPB100N04S4H2ATMA1 nach Preis ab 2.49 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Hersteller : Infineon Technologies Infineon_IPP_B_I100N04S4_H2_DS_v01_00_en-1730684.pdf MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
auf Bestellung 1980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.29 EUR
14+ 3.72 EUR
100+ 3.2 EUR
500+ 2.89 EUR
Mindestbestellmenge: 13
IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Hersteller : Infineon Technologies Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 3.69 EUR
100+ 2.94 EUR
500+ 2.49 EUR
Mindestbestellmenge: 4
IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Hersteller : Infineon Technologies ipp_b_i100n04s4-h2_ds_1_01.pdf Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB100N04S4H2ATMA1 Hersteller : Infineon Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)