Technische Details IPB100N06S2L-05 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 55V, Case: PG-TO263-3, On-state resistance: 4.4mΩ, Mounting: SMD, Gate charge: 170nC, Kind of channel: enhancement, Power dissipation: 300W, Technology: OptiMOS™, Drain current: 100A, Gate-source voltage: ±20V.
Weitere Produktangebote IPB100N06S2L-05
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPB100N06S2L05ATMA2 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Case: PG-TO263-3 On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement Power dissipation: 300W Technology: OptiMOS™ Drain current: 100A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB100N06S2L05ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH