IPB100N10S305ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 34+ | 5.05 EUR |
| 35+ | 4.78 EUR |
| 100+ | 4.52 EUR |
| 250+ | 4.27 EUR |
| 500+ | 4.02 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
34 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB100N10S305ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB100N10S305ATMA1 nach Preis ab 4.49 EUR bis 12.51 EUR
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IPB100N10S305ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 964 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB100N10S305ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB100N10S305ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB100N10S305ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB100N10S305ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 5.16 EUR |
| 35+ | 4.96 EUR |
| 100+ | 4.77 EUR |
| 250+ | 4.63 EUR |
| 500+ | 4.49 EUR |
| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 119+ | 5.63 EUR |
| 500+ | 5.24 EUR |
| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 119+ | 5.63 EUR |
| 500+ | 5.24 EUR |
| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 119+ | 5.63 EUR |
| 500+ | 5.24 EUR |
| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.51 EUR |
| 10+ | 8.4 EUR |
| 50+ | 6.64 EUR |
| 100+ | 6.07 EUR |
| 500+ | 5.68 EUR |