IPB100N10S305ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
| Anzahl | Preis |
|---|---|
| 2+ | 11.97 EUR |
| 10+ | 8.04 EUR |
| 100+ | 5.82 EUR |
| 500+ | 4.87 EUR |
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Technische Details IPB100N10S305ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4V @ 240µA, Power Dissipation (Max): 300W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB100N10S305ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPB100N10S305ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO263-3 Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 300W (Tc) Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB100N10S305ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB100N10S305ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 300W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB100N10S305ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH