IPB120N04S4L02ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.77 EUR |
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Technische Details IPB120N04S4L02ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 110µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB120N04S4L02ATMA1 nach Preis ab 1.61 EUR bis 4.15 EUR
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1413 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-CHANNEL 30/40V |
auf Bestellung 1819 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB120N04S4L02ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |