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IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1 Infineon Technologies

Infineon_IPB120N04S4L0210_DS_v01_00_en-1227162.pdf Hersteller: Infineon Technologies
MOSFETs N-CHANNEL 30/40V
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1+3.98 EUR
10+2.92 EUR
100+2.31 EUR
500+2.11 EUR
1000+2.01 EUR
2000+1.99 EUR
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Technische Details IPB120N04S4L02ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 110µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IPB120N04S4L02ATMA1 nach Preis ab 2.39 EUR bis 4.15 EUR

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Preis
IPB120N04S4L02ATMA1 IPB120N04S4L02ATMA1 Hersteller : Infineon Technologies Infineon-IPB120N04S4L0210-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f27bb46492 Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
10+3.06 EUR
100+2.39 EUR
Mindestbestellmenge: 5
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IPB120N04S4L02ATMA1 IPB120N04S4L02ATMA1 Hersteller : Infineon Technologies 9758ipb120n04s4l-02-data-sheet-10-infineon.pdffolderiddb3a304412b4079.pdf Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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IPB120N04S4L02ATMA1 IPB120N04S4L02ATMA1 Hersteller : Infineon Technologies Infineon-IPB120N04S4L0210-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f27bb46492 Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 110µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH