IPB120N06S402ATMA2 Infineon Technologies
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.83 EUR |
| 10+ | 4.07 EUR |
| 25+ | 3.73 EUR |
| 100+ | 2.9 EUR |
| 250+ | 2.83 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB120N06S402ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB120N06S402ATMA2 nach Preis ab 2.25 EUR bis 5.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB120N06S402ATMA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPB120N06S402ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPB120N06S402ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPB120N06S402ATMA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |