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IPB120N08S404ATMA1

IPB120N08S404ATMA1 Infineon Technologies

Infineon_IPP_B_I120N08S4_04_DataSheet_v01_10_EN-3362851.pdf Hersteller: Infineon Technologies
MOSFET N-CHANNEL 75/80V
auf Bestellung 2549 Stücke:
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1+6.20 EUR
10+5.21 EUR
25+4.91 EUR
100+4.21 EUR
250+3.98 EUR
500+3.73 EUR
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Technische Details IPB120N08S404ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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IPB120N08S404ATMA1 IPB120N08S404ATMA1 Hersteller : Infineon Technologies IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.94 EUR
10+5.26 EUR
100+3.74 EUR
500+3.10 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N08S404ATMA1 IPB120N08S404ATMA1 Hersteller : Infineon Technologies 178ipp_b_i120n08s4-04-data-sheet-10-infineon.pdffolderid5546d4614755.pdf Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N08S404ATMA1 IPB120N08S404ATMA1 Hersteller : Infineon Technologies IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH