
IPB120N10S405ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 2.07 EUR |
2000+ | 2.05 EUR |
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Technische Details IPB120N10S405ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 100A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 120µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB120N10S405ATMA1 nach Preis ab 2.31 EUR bis 5.44 EUR
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IPB120N10S405ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 100A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 13138 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120N10S405ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 15734 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120N10S405ATMA1 | Hersteller : INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 32296 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120N10S405ATMA1 | Hersteller : INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 32296 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120N10S405ATMA1 | Hersteller : Infineon Technologies |
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