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IPB120P04P4L03ATMA2

IPB120P04P4L03ATMA2 Infineon Technologies

Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.08 EUR
2000+2.04 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB120P04P4L03ATMA2 Infineon Technologies

Description: MOSFET P-CH 40V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 340µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Qualification: AEC-Q101.

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IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Hersteller : Infineon Technologies Infineon_IPP_B_I120P04P4L_03_DataSheet_v01_02_EN-3362454.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 1333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.40 EUR
10+3.45 EUR
100+2.78 EUR
250+2.75 EUR
5000+2.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Hersteller : Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+3.91 EUR
100+2.74 EUR
500+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Hersteller : Infineon Technologies infineon-ipp_b_i120p04p4l_03-datasheet-v01_02-en.pdf Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+8.44 EUR
28+5.20 EUR
50+4.06 EUR
100+3.65 EUR
500+3.10 EUR
1000+2.77 EUR
Mindestbestellmenge: 18
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IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Hersteller : Infineon Technologies infineon-ipp_b_i120p04p4l_03-datasheet-v01_02-en.pdf Power MOSFET Transistor
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH