IPB120P04P4L03ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details IPB120P04P4L03ATMA2 Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 340µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB120P04P4L03ATMA2 nach Preis ab 2.49 EUR bis 9.94 EUR
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
auf Bestellung 2993 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9224 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB120P04P4L03ATMA2 | Infineon Technologies |
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.61 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.75 EUR |
| 41+ | 4.2 EUR |
| 100+ | 2.94 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 5.75 EUR |
| 41+ | 4.11 EUR |
| 100+ | 2.83 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
MOSFETs MOSFET_(20V 40V)
auf Bestellung 2993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.67 EUR |
| 1000+ | 2.49 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.19 EUR |
| 10+ | 4.7 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.28 EUR |
| 500+ | 2.69 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.94 EUR |
| 28+ | 6.25 EUR |
| 50+ | 4.96 EUR |
| 100+ | 4.53 EUR |
| 500+ | 3.95 EUR |
| 1000+ | 3.63 EUR |
| IPB120P04P4L03ATMA2 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET P-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)



