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IPB156N22NFDATMA1

IPB156N22NFDATMA1 Infineon Technologies


Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7 Hersteller: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+6.98 EUR
Mindestbestellmenge: 1000
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Technische Details IPB156N22NFDATMA1 Infineon Technologies

Description: MOSFET N-CH 220V 72A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 220 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110.

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IPB156N22NFDATMA1 IPB156N22NFDATMA1 Hersteller : Infineon Technologies Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7 Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
auf Bestellung 1047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.3 EUR
100+ 10.98 EUR
500+ 9.69 EUR
Mindestbestellmenge: 2
IPB156N22NFDATMA1 IPB156N22NFDATMA1 Hersteller : Infineon Technologies Infineon-IPB156N22NFD-DS-v02_00-EN-1274371.pdf MOSFET DIFFERENTIATED MOSFETS
auf Bestellung 4983 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+18.28 EUR
10+ 15.68 EUR
25+ 14.85 EUR
100+ 13.05 EUR
250+ 12.27 EUR
500+ 11.54 EUR
1000+ 10.14 EUR
Mindestbestellmenge: 3
IPB156N22NFDATMA1 IPB156N22NFDATMA1 Hersteller : Infineon Technologies infineon-ipb156n22nfd-ds-v02_00-en.pdffileid5546d4625d5945ed015da.pdf Trans MOSFET N-CH 600V 20A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB156N22NFDATMA1 IPB156N22NFDATMA1 Hersteller : Infineon Technologies infineon-ipb156n22nfd-ds-v02_00-en.pdffileid5546d4625d5945ed015da.pdf Trans MOSFET N-CH 600V 20A
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IPB156N22NFDATMA1 IPB156N22NFDATMA1 Hersteller : Infineon Technologies infineon-ipb156n22nfd-ds-v02_00-en.pdffileid5546d4625d5945ed015da.pdf Trans MOSFET N-CH 600V 20A
Produkt ist nicht verfügbar