IPB156N22NFDATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 11.55 EUR |
| 10+ | 9.68 EUR |
| 25+ | 8.78 EUR |
| 100+ | 8.06 EUR |
| 250+ | 7.59 EUR |
| 500+ | 7.13 EUR |
| 1000+ | 6.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB156N22NFDATMA1 Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 220 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110.
Weitere Produktangebote IPB156N22NFDATMA1 nach Preis ab 5.92 EUR bis 13.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB156N22NFDATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 220V 72A TO263-3Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 220 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPB156N22NFDATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Description: MOSFET N-CH 220V 72A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 220 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.32 EUR |
| 10+ | 9.07 EUR |
| 100+ | 6.66 EUR |
| 500+ | 5.92 EUR |