Weitere Produktangebote IPB160N04S4H1ATMA1 (IPB160N04S4-H1) nach Preis ab 1.54 EUR bis 5.32 EUR
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IPB160N04S4H1ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 40V 160A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 727 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB160N04S4H1ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS-T2 |
auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB160N04S4H1ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB160N04S4H1ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 0.0014 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 167W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: OptiMOS-T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0014ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 8306 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB160N04S4H1ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB160N04S4H1ATMA1 | Hersteller : Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB160N04S4H1ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 160A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPB160N04S4H1ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 167W Case: TO263-7 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 137nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |