IPB175N20NM6ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.67 EUR |
| 10+ | 3.71 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 1.95 EUR |
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Technische Details IPB175N20NM6ATMA1 Infineon Technologies
Description: IPB175N20NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V, Power Dissipation (Max): 3.8W (Ta), 203W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 105µA, Supplier Device Package: PG-TO263-3-U01, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V.
Weitere Produktangebote IPB175N20NM6ATMA1 nach Preis ab 2.32 EUR bis 6.2 EUR
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IPB175N20NM6ATMA1 | Infineon Technologies |
 Description: IPB175N20NM6ATMA1Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V Power Dissipation (Max): 3.8W (Ta), 203W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 105µA Supplier Device Package: PG-TO263-3-U01 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V |
auf Bestellung 957 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB175N20NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
auf Bestellung 957 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.2 EUR |
| 10+ | 4.06 EUR |
| 100+ | 2.84 EUR |
| 500+ | 2.32 EUR |