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IPB19DP10NMATMA1

IPB19DP10NMATMA1 Infineon Technologies

Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+2.46 EUR
Mindestbestellmenge: 1000
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Technische Details IPB19DP10NMATMA1 Infineon Technologies

Description: TRENCH >=100V PG-TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V, Power Dissipation (Max): 3.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.04mA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.

Weitere Produktangebote IPB19DP10NMATMA1 nach Preis ab 2.35 EUR bis 5.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB19DP10NMATMA1 IPB19DP10NMATMA1 Hersteller : Infineon Technologies Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.17 EUR
10+ 4.3 EUR
100+ 3.42 EUR
500+ 2.9 EUR
Mindestbestellmenge: 6
IPB19DP10NMATMA1 IPB19DP10NMATMA1 Hersteller : Infineon Technologies Infineon_IPB19DP10NM_DataSheet_v02_00_EN-2942424.pdf MOSFET TRENCH >=100V
auf Bestellung 1000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.23 EUR
12+ 4.34 EUR
100+ 3.46 EUR
250+ 3.43 EUR
500+ 2.94 EUR
1000+ 2.47 EUR
2000+ 2.35 EUR
Mindestbestellmenge: 10
IPB19DP10NMATMA1 Hersteller : Infineon Technologies infineon-ipb19dp10nm-datasheet-v02_00-en.pdf SP005343867
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