IPB240N03S4LR8ATMA1928 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-7-3, Vgs(th) (Max) @ Id: 2.2V @ 230µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Packaging: Bulk.