IPB339N20NM6ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.09 EUR |
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Technische Details IPB339N20NM6ATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 52µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote IPB339N20NM6ATMA1 nach Preis ab 1.76 EUR bis 6.11 EUR
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1147 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 1088 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IPB339N20NM6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Kind of package: reel Mounting: SMD Polarisation: unipolar Pulsed drain current: 156A Drain-source voltage: 200V Drain current: 39A Gate charge: 15.9nC On-state resistance: 33.9mΩ Gate-source voltage: ±20V Power dissipation: 125W |
Produkt ist nicht verfügbar |