IPB339N20NM6ATMA1 Infineon Technologies
auf Bestellung 983 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 2.43 EUR |
| 61+ | 2.31 EUR |
| 66+ | 2.04 EUR |
| 100+ | 1.95 EUR |
| 250+ | 1.85 EUR |
| 500+ | 1.76 EUR |
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Technische Details IPB339N20NM6ATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 52µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote IPB339N20NM6ATMA1 nach Preis ab 1.78 EUR bis 5.46 EUR
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1266 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB339N20NM6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar |
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| IPB339N20NM6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 33.9mΩ Mounting: SMD Gate charge: 15.9nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |