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IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1 Infineon Technologies

Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.62 EUR
2000+ 1.54 EUR
5000+ 1.48 EUR
Mindestbestellmenge: 1000
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Technische Details IPB35N10S3L26ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 35A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 39µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Qualification: AEC-Q101.

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IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Hersteller : Infineon Technologies Infineon_IPB35N10S3L_26_DataSheet_v01_02_EN-3362447.pdf MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
auf Bestellung 4983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.4 EUR
10+ 2.82 EUR
100+ 2.24 EUR
250+ 2.15 EUR
500+ 1.88 EUR
1000+ 1.6 EUR
2000+ 1.52 EUR
IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Hersteller : Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.41 EUR
10+ 2.83 EUR
100+ 2.25 EUR
500+ 1.9 EUR
Mindestbestellmenge: 6
IPB35N10S3L26ATMA1 Hersteller : Infineon Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Hersteller : Infineon Technologies ipb35n10s3l-26-datasheet-1_1.pdf Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
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