IPB60R099C6 Infineon Technologies
auf Bestellung 1208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 7.09 EUR |
| 25+ | 6.97 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.70 EUR |
| 1000+ | 4.42 EUR |
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Technische Details IPB60R099C6 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3, Type of transistor: N-MOSFET, Technology: CoolMOS™ C6, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 37.9A, Power dissipation: 278W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 99mΩ, Mounting: SMD, Kind of channel: enhancement, Anzahl je Verpackung: 1000 Stücke.
Weitere Produktangebote IPB60R099C6
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IPB60R099C6 | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB60R099C6 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |