Technische Details IPB60R099C6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.21mA, Supplier Device Package: PG-TO263-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V.
Weitere Produktangebote IPB60R099C6ATMA1 nach Preis ab 4.51 EUR bis 12.95 EUR
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IPB60R099C6ATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 13000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R099C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R099C6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R099C6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R099C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A D2PAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 2208 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB60R099C6ATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 13000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.78 EUR |
| 3000+ | 4.57 EUR |
| IPB60R099C6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.97 EUR |
| IPB60R099C6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.31 EUR |
| 34+ | 4.77 EUR |
| 100+ | 4.51 EUR |
| IPB60R099C6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.31 EUR |
| 34+ | 4.95 EUR |
| 100+ | 4.76 EUR |
| IPB60R099C6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 600V 37.9A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.95 EUR |
| 10+ | 8.72 EUR |
| 50+ | 6.9 EUR |
| 100+ | 6.32 EUR |
| 500+ | 5.96 EUR |