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IPB60R099C7ATMA1 Infineon Technologies


Infineon-IPB60R099C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917abf8885e9d
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+3.72 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB60R099C7ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 22A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V.

Weitere Produktangebote IPB60R099C7ATMA1 nach Preis ab 3.75 EUR bis 9.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB60R099C7ATMA1 IPB60R099C7ATMA1 Infineon Technologies Infineon_IPB60R099C7_DS_v02_00_EN.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 1820 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.33 EUR
10+6.23 EUR
100+4.49 EUR
500+4.1 EUR
1000+3.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C7ATMA1 IPB60R099C7ATMA1 Infineon Technologies Infineon-IPB60R099C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917abf8885e9d Description: MOSFET N-CH 600V 22A TO263-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.33 EUR
10+6.24 EUR
100+4.49 EUR
500+3.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C7ATMA1 Infineon_IPB60R099C7_DS_v02_00_EN.pdf
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
auf Bestellung 1820 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+9.33 EUR
10+6.23 EUR
100+4.49 EUR
500+4.1 EUR
1000+3.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099C7ATMA1 Infineon-IPB60R099C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917abf8885e9d
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO263-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.33 EUR
10+6.24 EUR
100+4.49 EUR
500+3.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH