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IPB60R120P7

IPB60R120P7 Infineon Technologies

Infineon_IPB60R120P7_DS_v02_01_EN-3362577.pdf
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
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Technische Details IPB60R120P7 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 95W, Case: D2PAK, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 36nC, Kind of package: reel.

Weitere Produktangebote IPB60R120P7

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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES IPB60R120P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R120P7ATMA1 IPB60R120P7.pdf
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH