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IPB60R170CFD7ATMA1 Infineon Technologies


Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+2.27 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB60R170CFD7ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 14A TO263-3-2, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4.5V @ 300µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote IPB60R170CFD7ATMA1 nach Preis ab 2.09 EUR bis 4.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon_IPB60R170CFD7_DataSheet_v02_00_EN-1622398.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.79 EUR
10+3.48 EUR
100+2.53 EUR
250+2.52 EUR
500+2.11 EUR
1000+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+3.98 EUR
100+3.17 EUR
500+2.68 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R170CFD7ATMA1 Infineon_IPB60R170CFD7_DataSheet_v02_00_EN-1622398.pdf
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.79 EUR
10+3.48 EUR
100+2.53 EUR
250+2.52 EUR
500+2.11 EUR
1000+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R170CFD7ATMA1 Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.79 EUR
10+3.98 EUR
100+3.17 EUR
500+2.68 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH