IPB60R199CPATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 16A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB60R199CPATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 660µA, Supplier Device Package: PG-TO263-3-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V.
Weitere Produktangebote IPB60R199CPATMA1 nach Preis ab 2.73 EUR bis 6.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 650V 16A D2PAK-2 CoolMOS CP |
auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 16A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-TO263-3-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
auf Bestellung 3218 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPB60R199CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
| IPB60R199CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
IPB60R199CPATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |