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IPB60R210CFD7ATMA1

IPB60R210CFD7ATMA1 Infineon Technologies

Infineon_IPB60R210CFD7_DataSheet_v02_00_EN-3164371.pdf Hersteller: Infineon Technologies
MOSFET LOW POWER_NEW
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.63 EUR
10+3.89 EUR
25+3.66 EUR
100+3.15 EUR
250+2.97 EUR
500+2.80 EUR
1000+2.39 EUR
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Technische Details IPB60R210CFD7ATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 12A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V.

Weitere Produktangebote IPB60R210CFD7ATMA1 nach Preis ab 2.04 EUR bis 5.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+3.62 EUR
100+2.52 EUR
500+2.04 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Hersteller : Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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