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IPB60R250CPATMA1 Infineon Technologies

Name: IPB60R250CPATMA1
Brand: Infineon Technologies
SKU: 12524055-3
Price: 476.72 EUR
Availability: InStock

IPB60R250CP_rev2.1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b2fd3ce0087

Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V

auf Bestellung 62000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
202+	2.36 EUR

Mindestbestellmenge: 202

Im Einkaufswagen Stück im Wert von UAH

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Technische Details IPB60R250CPATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 12A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V.

Weitere Produktangebote IPB60R250CPATMA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
IPB60R250CPATMA1	Hersteller : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2 Mounting: SMD Technology: CoolMOS™ CP Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 12A Gate-source voltage: ±20V Power dissipation: 104W Drain-source voltage: 600V Case: PG-TO263-3-2 Anzahl je Verpackung: 1000 Stücke	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IPB60R250CPATMA1	Hersteller : Infineon Technologies	Description: MOSFET N-CH 600V 12A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IPB60R250CPATMA1	Hersteller : Infineon Technologies	MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IPB60R250CPATMA1	Hersteller : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2 Mounting: SMD Technology: CoolMOS™ CP Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 12A Gate-source voltage: ±20V Power dissipation: 104W Drain-source voltage: 600V Case: PG-TO263-3-2	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH