IPB60R280P6ATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.9 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.67 EUR |
| 2000+ | 1.55 EUR |
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Technische Details IPB60R280P6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4.5V @ 430µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB60R280P6ATMA1 nach Preis ab 1.96 EUR bis 5.28 EUR
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IPB60R280P6ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 13.8A D2PAKTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 430µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) |
auf Bestellung 944 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB60R280P6ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Description: MOSFET N-CH 600V 13.8A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.28 EUR |
| 10+ | 3.43 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.96 EUR |