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IPB65R045C7ATMA1 INFINEON TECHNOLOGIES


DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Hersteller: INFINEON TECHNOLOGIES
IPB65R045C7ATMA1 SMD N channel transistors
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Technische Details IPB65R045C7ATMA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 650V 46A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.25mA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V.

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IPB65R045C7ATMA1 IPB65R045C7ATMA1 Hersteller : Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R045C7ATMA1 IPB65R045C7ATMA1 Hersteller : Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R045C7ATMA1 IPB65R045C7ATMA1 Hersteller : Infineon Technologies Infineon_IPB65R045C7_DS_v02_01_en-1226920.pdf MOSFETs N-Ch 650V 46A D2PAK-2 CoolMOS C7
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Im Einkaufswagen  Stück im Wert von  UAH