Weitere Produktangebote IPB65R110CFDAATMA1 nach Preis ab 3.88 EUR bis 10.7 EUR
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 31.2A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 425000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 959 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 650V 99.6A D2PAK-2 |
auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1692 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB65R110CFDAATMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.11 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 31.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 277.8mW Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS CFDA productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1331 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB65R110CFDAATMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 31.2 A, 0.11 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 31.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 277.8mW Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS CFDA productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1331 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R110CFDAATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPB65R110CFDAATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: D2PAK; TO263 On-state resistance: 99mΩ Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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| IPB65R110CFDAATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: D2PAK; TO263 On-state resistance: 99mΩ Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT Gate-source voltage: 20V Technology: MOSFET |
Produkt ist nicht verfügbar |