IPB65R110CFDATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 31.2A D2PAK, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Power Dissipation (Max): 277.8W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).