IPB65R110CFDATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 650V 31.2A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 6.87 EUR |
| 100+ | 6.36 EUR |
| 500+ | 5.87 EUR |
| 1000+ | 5.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB65R110CFDATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Supplier Device Package: PG-TO263-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Weitere Produktangebote IPB65R110CFDATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IPB65R110CFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
|
|
IPB65R110CFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
 |
IPB65R110CFDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Mounting: SMD Drain-source voltage: 650V Drain current: 31.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 277.8W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IPB65R110CFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO263-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
Produkt ist nicht verfügbar |
|
|
|
IPB65R110CFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO263-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
Produkt ist nicht verfügbar |
|
 |
IPB65R110CFDATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 |
Produkt ist nicht verfügbar |
|
|
|
IPB65R110CFDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Mounting: SMD Drain-source voltage: 650V Drain current: 31.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 277.8W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-3 |
Produkt ist nicht verfügbar |