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IPB65R150CFDAATMA1

IPB65R150CFDAATMA1 Infineon Technologies

Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.43 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB65R150CFDAATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 22.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB65R150CFDAATMA1 nach Preis ab 3.43 EUR bis 8.04 EUR

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IPB65R150CFDAATMA1 IPB65R150CFDAATMA1 Hersteller : Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139af71b2a12046 Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.04 EUR
10+5.83 EUR
100+4.23 EUR
500+3.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R150CFDAATMA1 IPB65R150CFDAATMA1 Hersteller : Infineon Technologies Infineon-IPX65R150CFDA-DS-v02_00-en-1227246.pdf MOSFET N-Ch 650V 72A D2PAK-2
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