IPB65R150CFDAATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.08 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB65R150CFDAATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB65R150CFDAATMA1 nach Preis ab 3.56 EUR bis 10.72 EUR
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IPB65R150CFDAATMA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 634 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R150CFDAATMA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R150CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 22.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 1192 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R150CFDAATMA1 | Infineon Technologies |
MOSFETs N-Ch 650V 72A D2PAK-2 |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB65R150CFDAATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 163+ | 4.12 EUR |
| 500+ | 3.86 EUR |
| IPB65R150CFDAATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 163+ | 4.12 EUR |
| 500+ | 3.86 EUR |
| 1000+ | 3.56 EUR |
| IPB65R150CFDAATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.57 EUR |
| 10+ | 6.94 EUR |
| 100+ | 5.03 EUR |
| 500+ | 4.08 EUR |
| IPB65R150CFDAATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 72A D2PAK-2
MOSFETs N-Ch 650V 72A D2PAK-2
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.72 EUR |
| 10+ | 7.03 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.21 EUR |
| 1000+ | 3.92 EUR |
| 2000+ | 3.86 EUR |