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IPB65R230CFD7AATMA1

IPB65R230CFD7AATMA1 Infineon Technologies

infineonipb65r230cfd7adatasheetv0202en.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.66 EUR
12000+2.35 EUR
18000+2.12 EUR
24000+1.93 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB65R230CFD7AATMA1 Infineon Technologies

Description: AUTOMOTIVE_COOLMOS PG-TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 260µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB65R230CFD7AATMA1 nach Preis ab 2.02 EUR bis 5.79 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPB65R230CFD7AATMA1 IPB65R230CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPB65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f3215b397c84 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
10+3.45 EUR
100+2.41 EUR
500+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R230CFD7AATMA1 IPB65R230CFD7AATMA1 Hersteller : Infineon Technologies Infineon_IPB65R230CFD7A_DataSheet_v02_02_EN.pdf MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.79 EUR
10+3.8 EUR
100+2.66 EUR
500+2.16 EUR
1000+2.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R230CFD7AATMA1 IPB65R230CFD7AATMA1 Hersteller : Infineon Technologies infineonipb65r230cfd7adatasheetv0202en.pdf Trans MOSFET N-CH 650V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R230CFD7AATMA1 IPB65R230CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPB65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f3215b397c84 Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH