IPB65R230CFD7AATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1000+ | 2.69 EUR |
| 12000+ | 2.43 EUR |
| 18000+ | 2.23 EUR |
| 24000+ | 2.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB65R230CFD7AATMA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 260µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB65R230CFD7AATMA1 nach Preis ab 2.02 EUR bis 5.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB65R230CFD7AATMA1 | Infineon Technologies |
 Description: AUTOMOTIVE_COOLMOS PG-TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPB65R230CFD7AATMA1 | Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
auf Bestellung 164 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPB65R230CFD7AATMA1 |
|
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.09 EUR |
| IPB65R230CFD7AATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.79 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 2.02 EUR |