IPB65R660CFDATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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Technische Details IPB65R660CFDATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB65R660CFDATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IPB65R660CFDATMA1 | Infineon / IR |
MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB65R660CFDATMA1 |
|
Hersteller: Infineon / IR
MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2
MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)