IPB80N04S3-04 Infineon Technologies

Description: MOSFET N-CH 40V 80A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: PG-TO263-3-1, Vgs(th) (Max) @ Id: 4V @ 90µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive.