IPB80N06S208ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.03 EUR |
| 500+ | 2.82 EUR |
| 1000+ | 2.61 EUR |
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Technische Details IPB80N06S208ATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 58A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPB80N06S208ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 58A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V Qualification: AEC-Q101 |
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IPB80N06S208ATMA2 | Infineon Technologies |
MOSFET MOSFET_)40V 60V) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB80N06S208ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 58A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 58A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB80N06S208ATMA2 |
|
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
MOSFET MOSFET_)40V 60V)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH