IPB80N06S209ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Technische Details IPB80N06S209ATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 125µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB80N06S209ATMA2 nach Preis ab 1.87 EUR bis 5.74 EUR
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 854 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S209ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.87 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.03 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.17 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.17 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.76 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 219+ | 2.98 EUR |
| 500+ | 2.64 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.71 EUR |
| 10+ | 3.71 EUR |
| 100+ | 2.58 EUR |
| 500+ | 2.19 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
MOSFETs MOSFET_)40V 60V)
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.74 EUR |
| 10+ | 3.75 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.09 EUR |
| IPB80N06S209ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)