auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.8 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.42 EUR |
| 2000+ | 1.38 EUR |
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Technische Details IPB80N06S2L11ATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2V @ 93µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB80N06S2L11ATMA2 nach Preis ab 1.65 EUR bis 4.12 EUR
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IPB80N06S2L11ATMA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 55V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB80N06S2L11ATMA2 | Hersteller : Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB80N06S2L11ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
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IPB80N06S2L11ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB80N06S2L11ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |