IPB80N06S405ATMA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.88 EUR |
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Technische Details IPB80N06S405ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB80N06S405ATMA2 nach Preis ab 1.30 EUR bis 3.64 EUR
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IPB80N06S405ATMA2 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 60V 80A D2PAK-2 |
auf Bestellung 791 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S405ATMA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
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| IPB80N06S405ATMA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Case: PG-TO263-3-2 Drain-source voltage: 60V Drain current: 75A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 81nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 320A Mounting: SMD Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB80N06S405ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IPB80N06S405ATMA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Case: PG-TO263-3-2 Drain-source voltage: 60V Drain current: 75A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 81nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 320A Mounting: SMD |
Produkt ist nicht verfügbar |