IPB80N06S407ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Technische Details IPB80N06S407ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 40µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB80N06S407ATMA2 nach Preis ab 1.12 EUR bis 4.19 EUR
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IPB80N06S407ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S407ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 28103 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N06S407ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB80N06S407ATMA2 | Infineon Technologies |
MOSFETs N-Ch 60V 80A D2PAK-2 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB80N06S407ATMA2 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.18 EUR |
| IPB80N06S407ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 28103 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 341+ | 1.61 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.29 EUR |
| 10000+ | 1.12 EUR |
| IPB80N06S407ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.48 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.52 EUR |
| IPB80N06S407ATMA2 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 80A D2PAK-2
MOSFETs N-Ch 60V 80A D2PAK-2
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.37 EUR |
| 2000+ | 1.3 EUR |
| 5000+ | 1.24 EUR |