IPB80R290C3AATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB80R290C3AATMA2 Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPB80R290C3AATMA2 nach Preis ab 3.89 EUR bis 9.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPB80R290C3AATMA2 | Infineon Technologies |
Description: MOSFET N-CH 800V 17A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2144 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPB80R290C3AATMA2 | Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| IPB80R290C3AATMA2 | Infineon |
|
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB80R290C3AATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.24 EUR |
| 10+ | 6.2 EUR |
| 100+ | 4.47 EUR |
| 500+ | 4.45 EUR |
| IPB80R290C3AATMA2 |
|
Hersteller: Infineon Technologies
MOSFETs AUTOMOTIVE_COOLMOS
MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.79 EUR |
| 10+ | 6.67 EUR |
| 100+ | 4.86 EUR |
| 500+ | 4.38 EUR |
| 1000+ | 3.89 EUR |
| IPB80R290C3AATMA2 |
|
Hersteller: Infineon
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)